收藏本站
PD - 95951A
IRFR1010ZPbF
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
IRFU1010ZPbF
HEXFET ? Power MOSFET
D
V DSS = 55V
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This HEXFET ? Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
G
S
D-Pak
IRFR1010ZPbF
R DS(on) = 7.5m ?
I D = 42A
I-Pak
IRFU1010ZPbF
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V (Silicon Limited)
91
I D @ T C = 100°C Continuous Drain Current, V GS @ 10V
65
A
I D @ T C = 25°C
I DM
Continuous Drain Current, V GS @ 10V (Package Limited)
Pulsed Drain Current
42
360
P D @T C = 25°C Power Dissipation
Linear Derating Factor
140
0.9
W
W/°C
V GS
Gate-to-Source Voltage
± 20
V
E AS (Thermally limited) Single Pulse Avalanche Energy
110
mJ
E AS (Tested )
Single Pulse Avalanche Energy Tested Value
220
I AR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
E AR
T J
T STG
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
– ––
1.11
R θ JA
R θ JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
– ––
– ––
40
110
°C/W
HEXFET ? is a registered trademark of International Rectifier.
www.irf.com
1
09/16/10
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRFR1205TRR MOSFET N-CH 55V 44A DPAK
IRFR120TRRPBF MOSFET N-CH 100V 7.7A DPAK
IRFR12N25DTRPBF MOSFET N-CH 250V 14A DPAK
IRFR13N15DPBF MOSFET N-CH 150V 14A DPAK
IRFR13N20DCTRLP MOSFET N-CH 200V 13A DPAK
IRFR15N20DTRRP MOSFET N-CH 200V 17A DPAK
IRFR18N15DTRPBF MOSFET N-CH 150V 18A DPAK
IRFR18N15DTRR MOSFET N-CH 150V 18A DPAK
相关代理商/技术参数
IRFR1018EPBF 功能描述:MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR1018ETRPBF 功能描述:MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR1018ETRRPBF 功能描述:MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR110 功能描述:MOSFET N-Chan 100V 4.3 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR110_R4941 功能描述:MOSFET TO-252AA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR1109A 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR110A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFR110ATF 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube